Abstract:
Metal-semiconductor interfaces have a long history and
are crucially important to modern micro- and nanoelectronic
devices, and together with the spatial diminishing of their active areas are the
details of interface electronic structure becoming of the paramount importance
for the control of the charge carrier transport through the interface.
Modern experimental techniques
already allow us to investigate the properties of the
interface region with atomic resolution, but the unifying theoretical model does still not
exist which is especially true for the non-ideal interfaces where the presence of
foreign atoms or intentionally inserted layer or various defects are causing deviations from the
ideal cases
.
First we will review the basic concepts and theories of
the metal-semiconductor interface, and then we will focus
on the origin and the influence of disorder.
References:
R. T. Tung, Mat. Sci. Eng. R 35,1 (2001).
S. M. Sze Physics of semiconductor devices New York, Wiley, 1981.
T. C. G. Reusch et al lanl-preprint:cond-mat/0302551.
D. Korošak, B. Cvikl, Jpn. J. Appl. Phys. 41,1988 (2002).
Seminarsko predavanje bo v petek, 23. maja 2003 ob 15:15 uri v seminarski sobi CAMTP na Krekovi 2, pritlicje desno. Vljudno vabljeni vsi zainteresirani, tudi študentje.